The process and performance of double doping polysilicon gate MOSFET

摘要

In early days, our project team has analyzed the electric field, threshold voltage, capacitance, cut-off frequency and other characteristics of the double doping polysilicon gate MOSFET (DDPG-MOS), see references [1]. In this study, the process steps of DDPG-MOS are designed and simulated with software TSUPREM. Then the frequency and transient characteristic of the device are analyzed using software MEDICI. The results show that, the process of DDPG-MOS is completely compatible with CMOS, and its performances are improved significantly. Specially, DDPG-MOS has a wider frequency range and faster response speed, which has good application prospects in the RF field.