Effect of oxygen partial pressure on the electrical properties of the LSCO/AZO heterojunction

摘要

P-type La_0.5Sr_0.5CoO₃ (LSCO) and n-type 0.3 wt% Al-doped ZnO (AZO) thin films were obtained by radio-frequency magnetron sputter under different controlled Ar/O₂ atmosphere. The structure of the heterojunction was p-LSCO (~125 and 250 nm)-AZO (~300 and 600 nm)/Si wafer and show good rectifying behavior.