Analysis of attenuation, isolation and switching speed of DP4T double gate RF CMOS switch design

摘要

In this paper, we have discussed the attenuation with ON resistance, isolation and switching speed of a Double-Pole Four-Throw (DP4T) RF CMOS switch, with properties of symmetric double-gate (DG) MOSFET to make obvious the advantages for DG circuits and reduce the number of transistors which increases the circuit density per unit area in addition to functionality as compare to simple CMOS switch. This provides a switch with a better attenuation, isolation and switching speed to drive the circuit that does not add appreciable signal propagation delay and does not require additional voltage power supply.