We present for the first time a charge trapping technique as a viable passive biasing mechanism for capacitive silicon micromechanical resonators. Potential wells are created on the surface of the microresonator to trap charges for mimicking a polarization voltage (Vp) of 8 V. With no externally applied Vp, the resonance peak of a 20 µm thick silicon bulk acoustic resonator (SiBAR) with 50 nm transduction air-gaps comes up by ∼25 dB from the noise floor. An insertion loss (I.L.) of 30.7 dB and a quality factor (Q) of 59,000 has been measured in vacuum at a resonance frequency of 104.81 MHz.
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机译:我们首次提出了一种电荷捕获技术,作为电容性硅微机械谐振器的可行无源偏置机制。在微谐振器的表面上形成势阱,以捕获电荷,以模仿8 V的极化电压(V p inf>)。在没有外部施加V p inf>的情况下,谐振峰一个20 µm厚的硅体声波谐振器(SiBAR)具有50 nm的转换气隙,从本底噪声上升了约25 dB。在104.81 MHz的谐振频率下,在真空中测得了30.7 dB的插入损耗(I.L.)和59,000的品质因数(Q)。
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