We present for the first time a charge trapping technique as a viable passive biasing mechanism for capacitive silicon micromechanical resonators. Potential wells are created on the surface of the microresonator to trap charges for mimicking a polarization voltage (Vp) of 8 V. With no externally applied Vp, the resonance peak of a 20 µm thick silicon bulk acoustic resonator (SiBAR) with 50 nm transduction air-gaps comes up by ∼25 dB from the noise floor. An insertion loss (I.L.) of 30.7 dB and a quality factor (Q) of 59,000 has been measured in vacuum at a resonance frequency of 104.81 MHz.
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机译:我们在第一次提出电荷捕获技术作为电容性硅微机械谐振器的可动性被动偏置机构。在微生物表面上产生潜在孔,以捕获用于模拟8 V的偏振电压(V P IM>)的电荷。没有外部施加的V P IM>,共振峰值具有50nm转导空气间隙的20μm厚的硅散装声谐振器(Sibar),噪声底板~25dB。 30.7dB的插入损失(I.L.)和59,000的质量因数(Q),以104.81MHz的共振频率真空测量。
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