Design of an X-band high power solid state power amplifier based on GaN HEMT

摘要

Based on GaN HEMT's high output power, low power loss and efficient heat dissipation, an X-band, 50W solid state power amplifier is designed. Slotted-waveguide directional coupler is designed as a 2-way power divider/combiner. At last, the output power, 165W, is combined through three power combiners by four 50W solid state power amplifiers.