Preliminary Design of X-band High Efficiency Onboard Solid State Power Amplifier for Deep Space Missions Using GaN HEMT

摘要

This research proposes an X-band high efficiency onboard SSPA for deep space missions by focusing on GaN HEMT whose remarkable material properties, such as high thermal conductivity, wide band gap, and high breakdown voltage, are suitable for high power and high efficiency applications. To develop a high efficiency onboard SSPA is one of the great issues when we consider some missions toward Mars, Jupiter, and much farther planets because of the requirements of both ultra-long distance communication and low power consumption. In this paper, results of preliminary design and evaluations of some trial productions using COTS device will be shown.