Coulomb Blur Advantage of a Multi Shaped Beam Lithography Approach

摘要

This paper describes a new multi beam approach in electron beam lithography called Multi Shaped Beam (MSB). Based on the well known Variable Shaped Beam (VSB) principle, the single shaped beam arrangement is extended and complemented by an array of individually controlled shaped beams. The positive effect of the MSB approach on resolution limiting stochastic beam blur due to Coulomb interactions will be highlighted applying detailed electron-optical Monte-Carlo simulations. To verify the feasibility of the above-mentioned new approach, there is also depicted a proof-of-lithography test stand based on a complete e-beam-lithography system containing MSB-specific hardware and software components.