Systematic Study of the Relationship Between 1/f noise, Interface State Defects and Mobility Degradation of High-K/Metal CMOSFETs on (110) And (100) Substrate

摘要

We investigated in detail the relationship between the 1/f noise, carrier mobility and interface state defects between the Si substrate and oxide on (110) and (100) substrates. In the case of pMOSFETs, the 1/f noise is independent of the mobility degradation due to the increase of effective hole mass in Si channel. However, the 1/f noise is strongly related to the degradation in the hole mobility due to the process integration damage. With hole mobilities becoming lower, 1/f noise intensity was enhanced. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation. Additionally its behavior was affected by the difference between P_(b0) and P_(b1).