Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique

摘要

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlN epitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8° off-axis (0001) plane tilted toward the <11 2 0> direction and on-axis 4H-SiC (0001). An average growth rate of AlN layer at 2350°C in 500 Torr of N_2 was measured to be about 6μm/hr. While AlN layer grown on the 3C-SiC (100) substrate at 2350°C exhibited polycrystalline structure, AlN epitaxial layer grown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure. In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the size of the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalesced and the step-bunching was finally disappeared.