Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes

摘要

The impact of anode layers on the electrical characteristics of 10kV 4H-SiC PiN diodes has been evaluated in this work. Co-fabricated diodes with various epitaxial anode layer designs as well as those employing P~+ implanted injecting layers are used to experimentally investigate the device conduction mechanisms. The role of the injecting layer is demonstrated via electrical characteristics and numerical simulations, showing the importance of maintaining sufficient carrier recombination lifetime in the device anode region.