Monolithic Integration of E/D-mode pHEMT and InGaP HBT Technology on 150-mm GaAs Wafers

摘要

Wafer-level integration of GaAs enhancement-mode pHEMT, depletion-mode pHEMT and HBT (HW is the code name at WIN) is a very appealing technology, which offers a number of significant advantages over conventional device technologies. In this paper, we report the development status of the H W at WIN Semiconductors. MOCVD-grown epitaxial material is selected with InGaP HBT on top of pHEMT device to minimize the potential drawback of excessive parasitic compared to the pHEMT atop of HBT structure. Critical process steps, such as gate photolithography and gate recess process control, will be discussed and presented. The ED-pHEMT and HBT electrical performance (DC, small signal, noise, and power) and uniformity data will be included in the paper as well. Functional building blocks, such as high power switches and power amplifiers, based on the H W technology will also be demonstrated