ELECTRICAL CHARACTERIZATION AND MEASUREMENTS OF SiN THIN FILMS ON CRYSTALLINE SILICON SUBSTRATES BY PECVD

摘要

In this work silicon nitride (SiN) films were deposited on p-type mono-crystalline silicon substrates using SiH4/NH3 by plasma enhanced chemical vapour deposition (PECVD). The SiN films on silicon substrate have better surface passivation properties and better anti-reflection than the other material films. Later, these samples with the SiN film were prepared under different annealing conditions. Finally, we want to fully understand hydrogen behavior during deposition and following annealing, meanwhile, the effective carrier lifetimeτeff and the other electrical property of these samples with the SiN film were compared and contrasted with before and after annealing, these were also our focal point in this topic. The characterization and the electrical property of the sample were measured using Quasi-steady State Photoconductance Decay (QSSPCD), Spectral ellipsometry, Fourier-transform infrared spectroscopy (FTIR), The high-frequency 1MHz capacitance-voltage (C-V). This topic is mainly covered with the characterization measurements of thin film, including the effect characterization measurement of SiN on crystalline silicon solar cell. All rights reserved.