Electrical Characterization of MIS Devices Using PECVD SiN_x:H Films for Application of Silicon Solar Cells

摘要

The surface passivation of crystalline silicon solar cells using plasma enhanced chemical vapor deposition(PECVD), hydrogenated, silicon-nitride(SiN_x:H)thin films has become significant due to a low-temperature, low-cost and very effective defect passivation process. Also, a good quality antirefiection coating can be formed. In this work, SiN_x:H thin films were deposited by varying the gas ratio R(=NH_3/SiH4+NH3)and were annealed by rapid thermal processing(RTP). Metal-insulator-semiconductor(MIS)devices were fabricated using SiNX:H thin films as insulator layers and they were analyzed in the temperature range of 100 - 400 K by using capacitance-voltage(C-V)and current-voltage(I-V)measurements. The annealed SiNx:H thin films were evaluated by using the electrical properties at different temperature to determine the effect of surface passivation. We achieved an energy conversion efficiency of 18.1% under one-sun standard testing conditions for large-area(156 mm x 156 mm)crystalline-silicon solar cells.