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C4NP: LEAD-FREE AND LOW COST SOLDER BUMPING TECHNOLOGY FOR FLIP CHIP AND WLCSP

机译:C4NP:倒装芯片和WLCSP的无铅低成本焊接技术

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Today, various solder bumping technologies are being used in volume production. These include electroplating, solder paste printing, evaporation and the direct attach of preformed solder spheres. However, all these established technologies have important limitations for fine pitch bumping with lead-free alloys: Evaporation is too costly in general, solder paste printing often does not provide the desired bump stand-off height when it comes to fine-pitch bumping, electroplating is found to be expensive and difficult to control for lead-free alloys and preformed solder spheres are only applicable for a pitch down to approximately 500 microns. These challenges in the transition to lead-free solder bumping has led the European Union to grant exemptions until 2010 from the ban of lead in certain solder bumping applications. However, the pressure to move to lead-free continues for the entire industry. C4NP (C4-New Process) is a novel solder bumping technology developed by IBM and commercialized by Suss MicroTec. C4NP addresses the limitations of existing bumping technologies by enabling low-cost, fine pitch bumping using a variety of lead-free solder alloys. C4NP is a solder transfer technology where molten solder is injected into pre-fabricated and reusable glass templates (molds). Mold and wafer are brought into close proximity and solder bumps are transferred onto the entire 300mm (or smaller) wafer in a single process step. C4NP technology is capable of fine pitch bumping while offering the same alloy selection flexibility as solder paste printing. The simplicity of the C4NP process makes it a low cost solution for both, fine-pitch FC in package as well as WLCSP bumping applications. This paper reviews the current status of the first C4NP lines installed at semiconductor manufacturers. It discusses the relevant process equipment technology and a manufacturing cost model. Last but not least, the presentation includes manufacturing data provided by IBM's packaging operation at the Hudson Valley Research Park in East Fishkill, NY.
机译:如今,各种焊料凸点技术已用于批量生产。这些措施包括电镀,焊膏印刷,蒸发以及预先形成的焊球直接连接。但是,所有这些已建立的技术对于无铅合金的细间距隆起都有重要的局限性:蒸发成本通常很高,在进行细间距隆起,电镀时,锡膏印刷通常不能提供所需的隆起支脚高度。发现无铅合金价格昂贵且难以控制,并且预制的焊料球仅适用于低至约500微米的间距。向无铅焊料凸块过渡的这些挑战已导致欧盟在2010年之前豁免某些焊料凸块应用中的铅禁令。但是,整个行业仍然面临着转向无铅的压力。 C4NP(C4-New Process)是IBM开发并由Suss MicroTec商业化的新型焊料凸点技术。 C4NP通过使用多种无铅焊料合金实现低成本,细间距凸点来解决现有凸点技术的局限性。 C4NP是一种焊料转移技术,可将熔融焊料注入预制的可重复使用的玻璃模板(模具)中。使模具和晶片紧密接近,并在单个处理步骤中将焊料凸点转移到整个300毫米(或更小)的晶片上。 C4NP技术能够进行细微的颠簸,同时提供与焊膏印刷相同的合金选择灵活性。 C4NP工艺的简单性使其成为封装中的细间距FC以及WLCSP碰撞应用的低成本解决方案。本文回顾了半导体制造商安装的第一批C4NP线的现状。它讨论了相关的过程设备技术和制造成本模型。最后但并非最不重要的一点是,该演示文稿包含IBM位于纽约州East Fishkill的哈德逊河谷研究园的包装业务所提供的制造数据。

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