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Reduced features two-dimensional photonic crystals on InP-based materials etched using Cl/sub 2//Ar inductively coupled plasma

机译:使用Cl / sub 2 // Ar电感耦合等离子体刻蚀的InP基材料上的特征简化的二维光子晶体

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We have fabricated two-dimensional InP-based photonic crystal structures using Cl/sub 2//Ar inductively coupled plasma etching. Etched depth of 2.8 /spl mu/m is obtained for 240 nm hole diameter with a nearly vertical shape. With this recipe, we are able to etch small features, as small as 110 nm, down to 1.9 /spl mu/m. Optical qualification shows 80 dB/cm propagation losses in W3 InP/InGaAsP/InP photonic crystal waveguide.
机译:我们已经使用Cl / sub 2 // Ar电感耦合等离子体刻蚀制造了基于InP的二维光子晶体结构。对于240nm孔径的,近似垂直的形状,蚀刻深度为2.8 /splμm/ m。通过这种配方,我们能够蚀刻小至110 nm的小特征,最小至1.9 / spl mu / m。光学鉴定表明,在W3 InP / InGaAsP / InP光子晶体波导中,传播损耗为80 dB / cm。

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