IGBT DESIGN TRADEOFF BREAKTHROUGH FOR 1200 V U4 MODULES

摘要

In this paper, we present some key IGBT device technologies aimed at increasingswitching speed, reducing power losses, and minimizing EMI (Electro-MagneticInterference) while retaining enough voltage blocking capacity and high short-circuitwithstand capability. These technologies plus a new float-zone free-wheeling diode fordecreased recovery spikes and increased paralleling capabilities have been utilized inFuji's 1200 V U4-series modules to bring to the market a state-of-the-art IGBT modulefamily for use in applications ranging from AC motor drives to high-power UPS toconsumer white goods.