SEMIKRON is introducing the 2nd generation of the Soft-Punch-Through (SPT) Isolated Gate Bipolar Transistor (IGBT), the so called SPT+, in its flat 17mm SEMiX™ power module packages. For an optimised performance, the CAL 4 (Controlled Axial Lifetime) diode from SEMIKRON, especially designed for the fourth IGBT generation, will be used. This combination of new technologies in the latest power module package shows lower switching and conduction losses in comparison to the former chip generations. These improvements allow cost effective inverter designs together with improved softness from the chip side.
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