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Electro-optical reliability characterization of advanced cu/low-k interconnects

机译：先进的cu / low-k互连的电光可靠性表征

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《Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International》|2005年|P.584-585|共2页
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Guedj C.; Guillaumond J.F.; Modon F.; Arnaud L.; Arnal V.; Reimbold G.; Torres J.;
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1. Electrical Conduction And Tddb Reliability Characterization For Low-k Sicodielectric In Cu Interconnects [J] . Robin C.J. Wang, K.S. Chang-Liao, T.K. Wang, Thin Solid Films . 2008,第3期

机译：低k Sicodielectric铜互连中的电导率和Tddb可靠性表征
2. Band diagram for low-k/Cu interconnects: The starting point for understanding back-end-of-line (BEOL) electrical reliability [J] . Mutch Michael J., Pomorski Thomas, Bittel Brad C., Microelectronics & Reliability . 2016,第auga期

机译：低k / Cu互连的能带图：了解线后端（BEOL）电气可靠性的起点
3. Strategies to Ensure Electromigration Reliability of Cu/Low-k Interconnects at 10 nm [J] . Oates Anthony S. ECS Journal of Solid State Science and Technology . 2015,第1期

机译：确保10 nm的Cu / Low-k互连电迁移可靠性的策略
4. ELECTRO-OPTICAL RELIABILITY CHARACTERIZATION OF ADVANCED Cu/Low-k INTERCONNECTS [C] . C. Guedj, J. F. Guillaumond, F. Mondon, IEEE International Reliability Physics Symposium . 2005

机译：高级Cu / Low-K互连的电光可靠性表征
5. Mechanical reliability of porous low-k dielectrics for advanced interconnect: Study of the instability mechanisms in porous low-k dielectrics and their mediation through inert plasma induced re-polymerization of the backbone structure. [D] . Sa, Yoonki. 2015

机译：用于高级互连的多孔低k电介质的机械可靠性：多孔低k电介质的不稳定性机理及其通过惰性等离子体引发的骨架结构再聚合的介导研究。
6. Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects [O] . Hideharu Shimizu, Shuji Nagano, Akira Uedono, 2013

机译：用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
7. Quantitative Projections of Reliability and Performance for Low-k/Cu Interconnect Systems [O] . Kaustav Banerjee Amit, Amit Mehrotra, William Hunter, 2000

机译：低k / Cu互连系统的可靠性和性能的定量预测

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