The surfactant effects of antimony on the formation of InAsSb nanostructures on GaAs by metal-organic chemical vapor deposition

摘要

We have investigated InAsSb nanostructures formed on GaAs during MOCVD. The transition thickness from 2D growth to 3D growth is reduced by the addition of TMSb/Sb_4. This is consistent with both an increase in the adatom diffusion length and a reduction in the epilayer/vapor surface energy attributed TMSb/Sb_4.