Re-investigation of MOS inversion layer mobility from non-universality and possible new scattering mechanism aspects

摘要

This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100 K.