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Backend process optimization for 90 nm high-density ASIC chips

机译:90 nm高密度ASIC芯片的后端工艺优化

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摘要

Based on the marketing, methodology, and manufacturing requirements of ASIC products, an optimum back-end process for high-density ASIC chips in a 90 nm technology is proposed. The chip size for high-density ASIC chips has stayed roughly constant between 7 and 14 mm on a side. High-density chips are achieved with tight pitch for all routing levels. Optimum performance is obtained with a thinner metal 2 and 3 Cu thickness of 0.25 versus 0.35 /spl mu/m for the higher levels of metal.
机译:根据ASIC产品的市场,方法和制造要求,提出了90 nm技术中高密度ASIC芯片的最佳后端工艺。高密度ASIC芯片的一侧尺寸大致保持在7到14 mm之间。高密度芯片以紧凑的间距实现了所有布线级别。对于2和3较薄的金属,Cu的最佳厚度为0.25,而较高的金属含量为0.35 / spl mu / m。

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