Dynamic in-situ temperature profile monitoring of a deep UV post exposure bake process

摘要

A system for monitoring the dynamic temperature profile during the deep UV (DUV) post exposure bake (PEB) is described. Platinum resistor temperature detectors (RTDs) are embedded into silicon wafers. Hardware and software convert the resistances to temperatures. The RTD calibration is National Institute of Standards and Technology (NIST) traceable. The wafers are tested on both a thermally uniform hot plate and a production PEB chamber. The temperature profiles for the PEB are fitted to a heat transfer model allowing heating and cooling time constants to be determined. High accuracy and precision are demonstrated.