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Metrology, Inspection, and Process Control for Microlithography XVI

召开年：2002
召开地：Santa Clara, CA(US)
出版时间：-

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1.An Alternative Approach for Direct APC using Scatterometry Data

机译：使用散射数据直接APC的另一种方法
- 作者：Boaz Brill;Yoel Cohen;Igor Turovets;Dario Elyasy;Tzevi Beatus
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- APC;
- process control;
- scatterometry;
- lithography;
- neural network;
2.Die-scale wafer flatness: 3-dimensional imaging across 20 mm with nanometer-scale resolution

机译：芯片级晶圆平整度：20毫米的3维成像，纳米级分辨率
- 作者：Kirk Miller;David Fong;Dean Dawson;Bradley Todd
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
3.Reducing CD-SEM Measurement Carryover Effect for 193nm Resist Processes Using CEq

机译：使用CEq降低193nm抗蚀剂工艺的CD-SEM测量残留效应
- 作者：Haiqing Zhou;Chih-Yu Wang;Aaron Zuo;Joe Pratt
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
4.Three dimensional aspects of the shrinking phenomenon of ArF resist

机译：ArF抗蚀剂收缩现象的三个方面
- 作者：Ido Laufer;Guy Eytan;Ophir Dror
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- ArF resist;
- resist shrinkage;
- 3D SEM-metrology;
5.Evaluation of lithographic imaging performance by optical area measurement

机译：通过光学面积测量评估光刻成像性能
- 作者：I. Grodnensky;S. Mizutani;S. Slonaker
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- exposure tool;
- imaging performance;
- critical dimension;
- double-exposed marks;
- mark area measurement;
- mark image irradiance;
- optical metrology;
6.Tip characterization for CD-AFM: Getting to 2 run, 3 sigma

机译：CD-AFM的针尖表征：达到2运行，3 sigma
- 作者：Kirk Miller;Ami Chand;Greg Dahlen;Bradley Todd
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
7.Defect Analysis in 157-nm Photolithography Process

机译：157 nm光刻工艺中的缺陷分析
- 作者：Shinya Hori;Osamu Miyahara;Yukio Kiba;Yuko Ono;Junichi Kitano;Seiro Miyoshi;Takamitsu Furukawa;Toshiro Itani
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- 157-nm lithography resist;
- defect;
- high hydrophobicity;
- thin film;
8.Environmental Control for Lithography with 157-nm Exposure

机译：157 nm曝光的光刻环境控制
- 作者：Junichi Kitano;Yukio Kiba;Kouichiro Inazawa;Seiro Miyoshi;Hiroyuki Watanabe;Takamitsu Furukawa;Toshiro Itani
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- 157 nm;
- environmental control;
- chemically amplified resist;
9.Implementing Fully Automatic Macro Defect Detection and Classification System In High Production Semiconductor Fab

机译：在高产量半导体工厂中实现全自动宏观缺陷检测和分类系统
- 作者：Lloyd Lee;Michael Pham;David Pham;Manyam Khaja;Kathleen Hennessey;Juanita Miller
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
10.Monte Carlo Simulation of SEM for Target with Complex Geometry

机译：复杂几何目标的SEM蒙特卡罗模拟
- 作者：Vadim Manuylov
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- electron scattering;
- monte carlo simulation;
- SEM measurement;
- backscattering electrons;
11.Overlay Excursion Monitoring using SEM Image

机译：使用SEM图像进行叠加游览监控
- 作者：Jeong-Ho Yeo;Kyoung Mo Yang;Jung Soo Kim;Young Seog Kang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
12.Planarization for the Integration of CMOS and Micro Mirror Arrays

机译：CMOS和微镜阵列集成的平面化
- 作者：Yun Zheng;Mitra Dutta;Carl Kotecki;Chris Zincke
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- planarization;
- BCB;
- MEMS;
- micro-mirror-array;
- CMOS;
- photolithography;
13.Sensitivity of the Silicon Layer Thickness in SOI process in the UV Regime

机译：紫外线条件下SOI工艺中硅层厚度的灵敏度
- 作者：Deepak Shivaprasad;Ed Boltich
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- reflectometer;
- ellipsometer;
- SOI;
14.Simplified Cusum Model for Automated Control of Fab Processes

机译：用于Fab工艺自动控制的简化Cusum模型
- 作者：John Todd Downing;Tracey Sorenson
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
15.Spectroscopic Ellipsometry Measurements with The Grating Division-of-Amplitude Photopolarimeter

机译：光栅偏振分光光度计的光谱椭偏测量
- 作者：Paul C. Nordine;D. Scott Hampton;Shankar Krishnan
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- stokes meter;
- polarimetry;
- ellipsometry;
- mueller matrix ellipsometry;
- degree of polarization;
16.A New CrossBeam Inspection Tool Combining an Ultrahigh Resolution Field emission SEM and a High Resolution FIB

机译：结合超高分辨率场发射SEM和高分辨率FIB的新型CrossBeam检测工具
- 作者：Peter Gnauck;Peter Hoffrogge;Jens Greiser
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- SEM;
- FIB;
- TEM;
- semiconductor;
- failure analysis;
- device modification;
- analysis;
- inspection;
- metrology;
- deposition;
17.Analysis of Feature Shape Variation Using Scatterometry

机译：使用散射法分析特征形状变化
- 作者：Patrick Schiavone;Vincent Farys;Andre Michallet
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- scatterometry;
- ellipsometry;
- metrology;
- rigorous electromagnetic solver;
- top-rounding;
- footing;
- MMFE;
18.Atomic Force Microscopy with Carbon Nanotube Tip for Critical Dimension Measurement

机译：碳纳米管尖端的原子力显微镜用于临界尺寸测量
- 作者：Byong Chon Park;Ki Young Jung;Won Young Song;Beom-hoan O;Tae Bong Eom
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- carbon nanotube tip;
- AFM;
- critical dimension measurement;
19.Automated SEM Metrology of Wafers Printed Using a SCAA Mask

机译：使用SCAA掩模印刷的晶圆的自动SEM计量
- 作者：Sunil Desai;Takeaki (Joe) Ebihara;Marc D. Levenson;Sylvia White
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- SEM;
- phase-shifting mask;
- SCAAM;
- wafer CD;
- metrology;
20.Behavior of Chemically Amplified Resist Defects in TMAH Solution

机译：在TMAH溶液中化学放大的抗蚀剂缺陷的行为
- 作者：Yuko Ono;Osamu Miyahara;Yukio Kiba;Junichi Kitano
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- defect;
- chemically amplified resist;
- TMAH;
- developer;
21.Characterizing cross-sectional profile variations by using multiple parameters extracted from top-down SEM images

机译：通过使用自上而下的SEM图像提取的多个参数来表征横截面轮廓变化
- 作者：Chie Shishido;Yuji Takagi;Maki Tanaka;Osamu Komuro;Hidetoshi Morokuma;Katsuhiro Sasada
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- CD-SEM;
- lithography;
- process monitoring;
- image analysis;
22.Comparative Investigation of CD SEM Carryover Effect

机译：CD SEM残留效应的比较研究
- 作者：Anna Chernakova;Brad Miller;Thomas Boonstra;Alan Fan
- 会议名称：《》 | 2002年
- CD SEM;
- precision;
- carryover;
- photoresist;
- damage;
23.Impact on OPC Treatment Accuracy Due to Illumination Pupil Shape Deviation for 110 nm Target CD

机译：110 nm目标CD的光瞳形状偏差对OPC处理精度的影响
- 作者：Sabita Roy;Ralph Schlief;Stephen Hsu;Xuelong Shi;Armin Liebchen;J. Fung Chen;Steve Hansen
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
24.Improved Characteristics of Rainbow Defects with Novel Wafer Edge Exposure Technique

机译：新型晶片边缘曝光技术改善了彩虹缺陷的特性
- 作者：Kew-Chan Shim;Myoung-Soo Kim;Eung-Sok Lee;Chang-Seog Lee;Chul-Seung Lee;Myung-Goon Gil;Bong-Ho Kim;Jae-Sig In;Tae-Bong Yoon;Jai-Soon Kim
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- wafer edge exposure;
- rainbow defect;
- device yield;
- lens assembly;
25.Matching and Monitoring a CD-SEM Tool Cluster

机译：匹配和监视CD-SEM工具集群
- 作者：A. Sicignano;A.V. Nikitin;D. Y. Yeremin;M. Sandy;E. T. Goldburt
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- CD-SEM metrology;
- signal to noise ratio;
- measurement precision;
- scan non-linearity;
- pixel value;
- stability;
26.New approach for mapping and monitoring Damascene Trench depth using CD-SEM tilt imaging

机译：使用CD-SEM倾斜成像来绘制和监视镶嵌沟槽深度的新方法
- 作者：Ram Peltinov;Tony Pan;Ophir Dror
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- damascene;
- trench depth;
- depth monitoring;
- mapping;
27.New Clear-out Scheme to Improve the Overlay Performance for a CMP Process

机译：新的清除方案可改善CMP工艺的覆盖性能
- 作者：Yao-Wen Guo;Han-Pin Kao;Tsung-Chih Chien;Chia-Fu Chang;Hsin-Sung Lin;Yen-Fen Chen;Chin-Yu Ku
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- overlay;
- alignment mark;
- clear-out;
- CMP;
28.Optimization of E_(th) method for DUV process in-line monitor

机译：DUV过程在线监控器的E_（th）方法的优化
- 作者：Wen Zhan Zhou;Hao Chen;Teng Hwee Ng;Hui Kow Lim
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- E_(th);
- DUV resist;
- wwing curve;
- process control;
- bottom layer coating (BARC);
29.Proximity Effect Correction Optimization Considering Fogging and Loading Effects Compensation

机译：考虑起雾和负荷效应补偿的近距离效应校正优化
- 作者：Seung-Hune Yang;Yo-Han Choi;Jong-Rak Park;Yong Hoon Kim;Sung-Woon Choi;Jung-Min Sohn
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- proximity effect correction;
- fogging and loading effect compensation;
- EBM-3500;
30.Shape Measurement Simulation for the Silicon Trench Array by Scattering Properties and Continuous Wavelet Analysis with Interference Spectroscopy

机译：硅质沟槽阵列的散射特性和干涉光谱连续小波分析的形状测量模拟
- 作者：Hirokimi Shirasaki
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- semiconductor;
- trench;
- wavelet analysis;
- interference spectroscopy;
- FDTD method;
- BEM method;
31.Advanced Process Control of Overlay with Optimal Sampling

机译：最佳采样的高级过程控制
- 作者：Craig Garvin;Xuemei Chen;Matt Hankinson
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- APC;
- overlay;
- sample planning;
- process control;
- metrology delay;
32.CD Metrology for Avoiding Shrinkage of ArF Resist Patterns in 100nm ArF Lithography

机译：避免100nm ArF光刻中ArF抗蚀剂图案收缩的CD计量学
- 作者：Tae-Jun You;Cheol-Kyu Bok;Ki-Soo Shin
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
33.CD-SEM Calibration with TEM to Reduce CD Measurement Error

机译：使用TEM进行CD-SEM校准以减少CD测量误差
- 作者：Chang-Young Jeong;Joohyoung Lee;Ki-Yeop Park;Won Gyu Lee;Dai-Hoon Lee
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- CD-SEM;
- TEM;
- calibration;
- LER;
- uncertainly;
- sidewall angle;
34.Characterization of interfacial layers and surface roughness using spectroscopic reflectance, spectroscopic ellipsometry and atomic force microscopy

机译：使用光谱反射率，椭圆偏振光谱和原子力显微镜表征界面层和表面粗糙度
- 作者：Ray J. Hoobler;Rahul Korlahalli;Ed Boltich;Joe Serafin
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- ellipsometry;
- reflectance;
- interfacial layer;
- roughness;
- AFM;
35.Design and Development of a Measurement and Control System for Measuring SEM Magnification Calibration Samples

机译：用于测量SEM放大倍率校准样品的测控系统的设计与开发
- 作者：B. N. Damazo;E. C. Jayewardene;W. J. Keery;A. E. Vladar;M. T. Postek
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- SEM;
- magnification;
- automatic;
- computer control;
- laser stage;
36.Overlay registration target design for wafer-induced shift characterization

机译：晶圆对准位移表征的套准目标设计
- 作者：Albert L. Ihochi;Alan S. Wong
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- overlay;
- registration;
- CMP;
- metal offset;
- wafer-induced-shift;
37.Spectroscopic CD Metrology for Sub-100nm Lithography Process Control

机译：用于100nm以下光刻工艺控制的光谱CD计量学
- 作者：Walter D. Mieher;Thaddeus G. Dziura;Xuemei Chen;Paola DeCecco;Ady Levy
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- scatterometry;
- SCD;
- focus exposure matrix;
- FEM;
- spectroscopic ellipsometry;
- spectroscopic critical dimension;
- focus exposure monitoring;
38.Study of Gate Line Edge Roughness Effects in 50 nm Bulk MOSFET Devices

机译：50 nm大块MOSFET器件中栅极线边缘粗糙度影响的研究
- 作者：Shiying Xiong;Jeffrey Bokor;Qi Xiang;Philip Fisher;Ian Dudley;Paula Rao
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- line edge roughness;
- MOSFET;
- simulation;
- leakage;
39.TIS-WIS Interaction Characterization on Overlay Measurement Tool

机译：叠加测量工具上的TIS-WIS交互特性
- 作者：Kenji Hoshi;Eiichi Kawamura;Hiroshi Morohoshi;Hideki Ina;Takanori Fujimura;Hiroyuki Kurita;Joel L. Seligson
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- lithography;
- overlay;
- metrology;
- TIS;
- WIS;
- measurement;
40.Advances in Process Overlay on 300 mm wafers

机译：300毫米晶圆上工艺覆盖的进展
- 作者：Jens Staecker;Stefanie Arendt;Karl Schumacher;Evert Mos;Richard van Haren;Maurits van der Schaar;Remi Edart;Wolfgang Demmerle;Hoite Tolsma
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- overlay;
- alignment systems;
- process overlay;
- STI;
- CMP;
- resist spin effects;
- 300 mm wafer processing;
41.Characterization and Reduction of Highly-Localized Substrate Contamination Defects in Metal Patterning

机译：金属图案化中高度局部化的基材污染缺陷的表征和减少
- 作者：Yiming Gu;Anqing Zhang;Zhenjiang Yu;Wanqing Cao;Sean Chen;John Sturtevant;SK Lee
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
42.Compensation of Resist Trim Process and Poly Gate Plasma Microloading Effect for Lithography Process Window and CD Uniformity Improvement

机译：光刻工艺窗口补偿抗微调工艺和多晶硅栅极等离子体微负载效应并改善CD均匀性
- 作者：Kay Ming Lee;Cheng Wen Fan;Jiunn Ren Hwang;Chih Chiang Liu;Kuei Chun Hung
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- resist trim process;
- microloading;
- OPC;
- CD control;
- lithography window;
43.Contrast Enhancement Materials for Yield Improvement in Submicron I-Iine Lithography

机译：用于亚微米I-Iine平版印刷的良率提高的对比度增强材料
- 作者：Shane Geary;Jim Thompson;Elliott Capsuto
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- lithography;
- contrast enhancement;
- CEL;
- CEM;
- process latitude;
- yield;
44.Dynamic in-situ temperature profile monitoring of a deep UV post exposure bake process

机译：动态深紫外曝光后烘烤过程的原位温度曲线监控
- 作者：Barney Cohen;Wayne Renken;Paul Miller
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
45.Imaging interferometric microscopy for enhanced resolution

机译：成像干涉显微镜，提高分辨率
- 作者：Christian J. Schwarz;Yuliya Kutznetsova;S.R.J. Brueck
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
46.Metal Characterization and Process Enhancement Techniques for Photolithographic Materials

机译：光刻材料的金属表征和工艺增强技术
- 作者：Fu-Hsiang Ko;Hsuen-Li Chen;Chun-Chen Hsu;Tieh-Chi Chu
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
47.Nanotopography metrology for leading edge 300mm process integration

机译：纳米形貌计量技术，用于领先的300mm工艺集成
- 作者：John F. Valley;Todd Templeton;Chris L. Koliopoulos;Masanori Yoshise
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
48.The Effect of Various ArF Resist Shrinkage Amplitude on CD Bias

机译：各种ArF抵抗收缩幅度对CD偏置的影响
- 作者：Chih-Ming Ke;Tsai-Sheng Gau;Pei-Hung Chen;Anthony Yen;Bum J. Lin;Tadashi Otaka;Takashi Iizumi;Katsuhiro Sasada;Kazuhiro Ueda
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- ArF resist shrinkage;
- ADI;
- AEI;
- CD bias;
- CD SEM;
- APC;
49.Application of Feedforward Reticle - Offset for Overlay APC in a High Part Count Fab

机译：前馈掩模版-用于APC叠层APC的抵消
- 作者：David Crow;Etienne Joubert
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- overlay;
- registration;
- steppers;
- scanners;
- metrology;
- yield;
- foundry;
- reticle;
- photolithography;
- APC;
50.Comparison of ATHENA~(TM) and TTL Alignment Capability on Product Wafers

机译：产品晶圆上ATHENA〜（TM）和TTL对准能力的比较
- 作者：Juliann Opitz;David Laidler
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- alignment;
- overlay;
- gate;
- STI;
- WSi;
- CMP;
51.Determination of DICD Best Focus by Top-down CD-SEM

机译：通过自上而下的CD-SEM确定DICD最佳聚焦
- 作者：WenZhan Zhou;Hui Kow Lim;Teng Hwee Ng
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- critical dimension;
- top-down CD-SEM;
- best focus;
- resist thickness;
52.Factors Influencing CD-SEM Metrology

机译：影响CD-SEM计量学的因素
- 作者：A. Sicignano;A.V. Nikitin;D. Y. Yeremin;M. Sandy;E. T. Goldburt
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- signal to noise ratio;
- stability;
- CD-SEM metrology;
- scan non-linearity;
- measurement precision;
- sub 100nm metrology;
53.GaAs Wafer Overlay Performance Effected by Annealing Heat Treatment - Part Ⅱ

机译：退火热处理对GaAs晶片覆盖性能的影响（二）
- 作者：Ying Liu;Iain Black
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- IC gallium-arsenide process;
- overlay registration;
- vector map;
- RTA annealing;
- overlay performance;
54.Line-profile and critical dimension correlation between a normal incidence optical CD metrology system and SEM

机译：垂直入射光学CD计量系统和SEM之间的线轮廓和临界尺寸相关性
- 作者：Weidong Yang;Roger Lowe-Webb;Rahul Korlahalli;Vera Zhuang;Hiroki Sasano;Wei Liu;David Mui
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- optical critical dimension;
- CD;
- process control;
- optical metrology;
- diffraction;
55.2-D Image Based CDSEM Applications for Thin Film Head Metrology

机译：基于二维图像的CDSEM在薄膜磁头测量中的应用
- 作者：Srinath Venkataram;Neeraj Khanna;Sanford Lewis;Gautam Khera
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
56.Contamination control methods for gases used in the microlithography process

机译：微光刻工艺中所用气体的污染控制方法
- 作者：Larry Rabellino;Chuck Applegarth;Giorgio Vergani
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- DUV;
- EUV;
- lithography;
- purification;
- impurity;
- defect;
- contamination;
- hydrocarbon;
- nitrogen;
- moisture;
57.Normal Incidence Spectroscopic Ellipsometry and Polarized Reflectometry for Measurement of Photoresist Critical Dimensions

机译：垂直入射光谱椭圆仪和偏振反射仪用于光致抗蚀剂临界尺寸的测量
- 作者：James M. Holden;Tom Gubiotti;William A.McGaham;Mircea Dusa;Ton Kiers
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- spectroscopic ellipsometry;
- polarized reflectometry;
- TE;
- TM;
- RCWT;
- slit and scan-intrafield;
- lithography latitude;
- model fit;
- APC;
58.Rigorous Electromagnetic Simulation of Stepper Alignment

机译：步进对准的严格电磁仿真
- 作者：Thomas V. Pistor;Robert J. Socha
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- alignment;
- simulation;
- TEMPEST;
- FDTD;
- ATHENA;
59.The Design of a Cost Effective Multi Wavelength Development Rate Monitoring Tool

机译：具有成本效益的多波长发展速率监测工具的设计
- 作者：Steven A. Scheer;Colin J. Brodsky;Stewart A. Robertson;Doris Kang
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- multi wavelength development rate monitor;
- surface inhibition;
- standing wave;
- deprotection;
60.Understanding the Forbidden Pitch Phenomenon and Assist Feature Placement

机译：了解禁止的音高现象和辅助特征放置
- 作者：Xuelong Shi;Stephen Hsu;Fung Chen;Michael Hsu;Robert J. Socha;Micea Dusa
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- optical proximity effect;
- OPE;
- exposure latitude;
- EL;
- scattering bar;
- SB;
- forbidden pitch;
61.Linear Alignment Correction Algorithm for Deep Submicron Lithography

机译：深亚微米光刻的线性对准校正算法
- 作者：David H Ziger;Pierre Leroux
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年
- alignment control;
- alignment correction algorithm;
- alignment compensation;
62.Characterization and Control of Organic Airborne Contamination in Lithographic Processing

机译：光刻工艺中有机空气污染的表征与控制
- 作者：Andrew J. Dallas;Kristine Graham;Marc Clarysse;Vic Fonderie
- 会议名称：《Metrology, Inspection, and Process Control for Microlithography XVI》 | 2002年