Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D

摘要

High quality ultra-thin TM-SGOI substrate with T/sub SOI/ > 55 nm is developed to combine the device benefits of strained silicon and SOI. 80-90% Id,sat and electron mobility increase are shown in long channel nFET device. For the first time, 20-25% device performance enhancement is demonstrated at 55 nm short channel strained silicon SGOI nFET devices.