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Reduction of mask error enhancement factor (MEEF) by the optimum exposure dose self-adjusted mask

机译:通过最佳曝光剂量自调整掩模降低掩模误差增强因子(MEEF)

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To reduce mask error enhancement factor (MEEF), we have developed the new type half-tone phase shift mask (HTPSM) in which transparent regions are surrounded by opaque rims. We evaluated the imaging performance of contact hole patterns including the MEEF and the depth of focus (DOF). Using this new method, we obtained about 2.0 MEEF and 0.7-μm DOF for 180-nm isolated hole, which was much better than that in the conventional mask such as binary mask or HTPSM (the MEEF more than 3). The advantage of our method was that it was possible to attain both the MEEF reduction and the DOF enhancement by the optimization of mask hole size and rim width. Furthermore, we confirmed that this new method was effective not only for improving the exposure dose latitude but also for attenuating side-peak effect.
机译:为了降低掩模误差增强因子(MEEF),我们开发了新型半色调相移掩模(HTPSM),其中透明区域被不透明边缘包围。我们评估了包括MEEF和焦点深度(DOF)在内的接触孔图案的成像性能。使用这种新方法,对于180 nm的隔离孔,我们获得了约2.0 MEEF和0.7μmDOF,这比常规掩模(例如二元掩模或HTPSM)(MEEF大于3)要好得多。我们方法的优点是,通过优化掩膜孔尺寸和边缘宽度,可以同时实现MEEF降低和DOF增强。此外,我们证实了这种新方法不仅对改善暴露剂量的宽容度有效,而且对减轻侧峰效应也有效。

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