首页> 外文会议>Optical Microlithography XIII >Analytic Approach to Understanding the Impact of Mask Errors on Optical Lithography
【24h】

Analytic Approach to Understanding the Impact of Mask Errors on Optical Lithography

机译:理解掩模误差对光学光刻的影响的解析方法

获取原文
获取外文期刊封面目录资料

摘要

The characterization of the Mask Error Enhancement Factor (MEEF) for a variety of feature types under a variety of processing conditions is presented. Analytic expressions for the aerial image MEEF under simple incoherent and coherent illumination conditions are derived, including the effect of defocus. Errors in processing, such as focus and exposure errors, also affect the value of the MEEF. Thus, another approach to evaluating the impact of mask errors is to look at the reduction in the process window caused by these errors. Using simulation, a study of the impact of mask CD errors on the overlapping process windows is presented and used as the basis for realistic mask CD specifications.
机译:提出了在各种处理条件下针对多种特征类型的掩模误差增强因子(MEEF)的表征。推导了在简单非相干和相干照明条件下的航空影像MEEF的解析表达式,包括散焦的影响。处理中的错误(例如聚焦和曝光错误)也会影响MEEF的值。因此,评估掩模错误影响的另一种方法是查看由这些错误引起的工艺窗口的减少。通过仿真,对掩模CD错误对重叠工艺窗口的影响进行了研究,并将其作为现实掩模CD规范的基础。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号