The manipulation of chemically amplified resist dissolution rate behavior for improved performance

摘要

The properties of the PAG and the type of the blocking group combined with the process temperature effect the slope of the dissolution rate curves within the critical lithographic area of the curve significantly. The location of the steepest dissolution rate switching and the photospeed of the resist are primarily a function of the PA type and base ratio. The resist inhibition is largely influenced by the blocking level of the polymer. The total phenolic (OH) content of de-blocked polyhydroxystyrene (PHS) based resist systems is the only parameter that affects their maximun dissolution rate (R_(max)).