首页> 外文会议>Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International >Comparative study of W-plug, Al-plug and Al-dual damascene for 0.18 /spl mu/m ULSI multilevel interconnect technologies
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Comparative study of W-plug, Al-plug and Al-dual damascene for 0.18 /spl mu/m ULSI multilevel interconnect technologies

机译:W-plug,Al-plug和Al-双金属镶嵌用于0.18 / spl mu / m ULSI多级互连技术的比较研究

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Comparative studies of W-plug, Al-plug and Al dual damascene were carried out for 0.18 /spl mu/m ULSI multilevel interconnects. The via resistance of Al dual damascene was one-fourth of that of W-plug. Al dual damascene interconnects were found to have misalignment tolerance. The electromigration lifetime of Al dual damascene was 4 times longer than that of conventional W-plug, even though lithography misalignment occurred between the vias and the trench wiring. We developed highly reliable Al dual damascene interconnect technology with 0.56 /spl mu/m pitch for 0.18 /spl mu/m design rule ULSIs.
机译:对0.18 / spl mu / m ULSI多级互连进行了W-plug,Al-plug和Al双镶嵌的比较研究。 Al双金属镶嵌的通孔电阻是W-plug的四分之一。发现双金属镶嵌互连具有不对准公差。即使在过孔和沟槽布线之间发生光刻失准,Al双金属镶嵌的电迁移寿命也比传统的W-plug长4倍。我们开发了高度可靠的Al双金属互连技术,间距为0.56 / spl mu / m,设计规则ULSI为0.18 / spl mu / m。

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