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TSV backside processing using copper damascene interconnect technology
TSV backside processing using copper damascene interconnect technology
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机译:使用铜镶嵌互连技术的TSV背面处理
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摘要
Generally, the subject matter disclosed herein relates to interconnect structures used for making electrical connections between semiconductor chips in a stacked or 3D chip configuration, and methods for forming the same. One illustrative method disclosed herein includes forming a conductive via element in a semiconductor substrate, wherein the conductive via element is formed from a front side of the semiconductor substrate so as to initially extend a partial distance through the semiconductor substrate. The illustrative method also includes forming a via opening in a back side of the semiconductor substrate to expose a surface of the conductive via element, and filling the via opening with a layer of conductive contact material.
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