InP light emitting diodes on Si substrates integrated with back-surface diffractive lenses

摘要

We have fabricated 1.55-/spl mu/m InGaAsP/InP light emitting diodes (LEDs) on Si integrated with back-surface diffractive lenses. The LEDs were fabricated on Si by wafer bonding and the binary diffractive lenses were integrated on back-surface of the Si substrates by photolithography and reactive ion etching. LED light emitted from the Si back-surface was observed to be collimated with a diffraction efficiency of about 35%, which is close to the theoretical limit of the binary diffractive lens. This integrated device will facilitate the implementation of optical interconnects in advanced VLSI systems.