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InP light emitting diodes on Si substrates integrated with back-surface diffractive lenses

机译:在与背面衍射镜头集成的SI基板上的INP发光二极管

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We have fabricated 1.55-/spl mu/m InGaAsP/InP light emitting diodes (LEDs) on Si integrated with back-surface diffractive lenses. The LEDs were fabricated on Si by wafer bonding and the binary diffractive lenses were integrated on back-surface of the Si substrates by photolithography and reactive ion etching. LED light emitted from the Si back-surface was observed to be collimated with a diffraction efficiency of about 35%, which is close to the theoretical limit of the binary diffractive lens. This integrated device will facilitate the implementation of optical interconnects in advanced VLSI systems.
机译:我们在与背面衍射镜头集成的Si上制造了1.55- / SPL MU / M InGaASP / InP发光二极管(LED)。通过晶片键合在Si上制造LED,并且通过光刻和反应离子蚀刻将二进制衍射透镜整合在SI基板的后表面上。观察到从Si背面发射的LED光以准直,其衍射效率为约35%,其接近二元衍射透镜的理论极限。该集成设备将有助于在高级VLSI系统中实现光学互连。

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