Improved selective area growth properties in metalorganic vapor phase epitaxy by adding HCl

摘要

Selective area growth (SAG) of InP on a planar substrate by metalorganic vapor phase epitaxy (MOVPE) is an attractive way to integrate optical devices. To improve the growth mode of SAG, the author has added hydrogen chloride (HCl) to conventional MOVPE, and discusses the flatness, thickness enhancement ratio, and crystalline quality of Cl-assisted SAG.