Highly uniform regrown In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes on In/sub 0.53/Ga/sub 0.47/As

机译：In / sub 0.53 / Ga / sub 0.47 / As上高度均匀的In / sub 0.53 / Ga / sub 0.47 / As / AlAs / InAs谐振隧穿二极管

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We studied molecular beam epitaxial (MBE) regrowth of In/sub 0.53/Ga/sub 0.47/As on InGaAs and obtained highly uniform regrown resonant tunneling diodes (RTDs) on HEMTs grown by metalorganic chemical vapor deposition (MOCVD) with the peak current standard deviation over a 2" wafer as low as 3%.

机译：我们研究了In / Sub 0.53 / Ga / sub 0.47 /如InGaAs中的分子束外延（MBE）再生，并获得了通过峰值电流标准的金属化学气相沉积（MOCVD）生长的高度均匀的再生共振隧道二极管（RTDS）偏离2“晶圆低至3％。

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《Indium Phosphide and Related Materials, 1998 International Conference on》|1998年|P.568-570|共3页
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Osaka; J.; Maczawa; K.;
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中图分类无线电电子学、电信技术;
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专利

1. Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes [J] . Zhang Yang, Han Chun-Lin, Gao Jian-Feng, 中国物理：英文版 . 2008,第004期

机译：间隔层厚度对拟晶AlAs / In0.53Ga0.47As / InAs共振隧穿二极管的电流-电压特性的影响
2. Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes on quantum well widths [J] . Zhang Yang, Zhang Yu, Zeng Yi-Ping 中国物理：英文版 . 2008,第012期

机译：拟态AlAs / In0.53Ga0.47As / InAs共振隧穿二极管的电流-电压特性对量子阱宽度的依赖性
3. Thin film pseudomorphic AlAs/In/sub 0.53/Ga/sub 0.47/As/InAs resonant tunnelling diodes integrated onto Si substrates [J] . Evers N., Vendier O. IEEE Electron Device Letters . 1996,第9期

机译：薄膜假晶AlAs / In / sub 0.53 / Ga / sub 0.47 / As / InAs谐振隧穿二极管集成在Si衬底上
4. Highly uniform regrown In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes on In/sub 0.53/Ga/sub 0.47/As [C] . Osaka J., Maczawa K., Institute of Electric and Electronic Engineer International Conference on Indium Phosphide and Related Materials . 1998

机译：/ Sub 0.53 / Ga / sub 0.47 / AS / ALAS / INAS中的高度均匀的重新重新重新谐振隧道二极管/ SUB 0.53 / GA / SUB 0.47 / AS
5. Ohmic contacts to n-GaAs and n-In(0.53)Ga(0.47)As: A thermodynamic approach. [D] . Chen, David Yuxiao. 1997

机译：与n-GaAs和n-In（0.53）Ga（0.47）As的欧姆接触：一种热力学方法。
6. Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [O] . Yang Zhang, Min Guan, Xingfang Liu, 2011

机译：电学和光学特性对AlAs / In0.53Ga0.47As / InAs共振隧穿二极管中生长中断的依赖性
7. Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [O] . Zhang, Yang, Guan, Min, Liu, Xingfang, 2011

机译：电学和光学特性对AlAs / In0.53Ga0.47As / InAs共振隧穿二极管中生长中断的依赖性
8. In0.53 Ga0.47 As/AlAs Resonant Tunneling Diodes with Peak Current Densities in Excess of 450 kA/cm2. [R] . Broekaert, T. P., Fonstad, C. G. 1990

机译：In0.53 Ga0.47 as / alas谐振隧道二极管，峰值电流密度超过450 ka / cm2。

Highly uniform regrown In/sub 0.53/Ga/sub 0.47/As/AlAs/InAs resonant tunneling diodes on In/sub 0.53/Ga/sub 0.47/As

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