Carrier lifetime in p-doped InGaAs and InGaAsP

摘要

Carrier lifetime has been measured in c and be doped InGaAs and InGaAsP grown by chemical beam epitaxy. At high doping level, carrier lifetime in InGaAs is limited by Auger recombination which is slightly different from that of undoped InGaAs for the same hole density. Carbon doped InGaAsP shows non radiative recombinations linked to the amphoteric nature of carbon in these materials.