Efficiency of Photoluminescence and Excess Carrier Confinement in InGaAsP/GaAsStructures Prepared by Metal-Organic Chemical-Vapor Deposition

摘要

Special double-and separate-confinement InGaAsP/GaAS heterostructures intendedfor photoluminescence measurements have been grown by low-pressure metal-organic chemical-vapor deposition. The band gap of the active region quaternary material was close to 1.5 eV, and the waveguide of the separate-confinement structures was near 1.8 eV. Measurement of the integrated luminescence efficiency at 300 K has shown that over a wide range of excitation level radiative transitions are the dominant mechanism for excess carrier recombination in the active region of the structures studied. As determined by spectral measurements, the excess carrier concentration in the waveguide of the separate-confinement hetero-structures and the intensity of the waveguide emission band correspond to a condition of the thermal equilibrium of the excess carrier populations in the active region and the waveguide. The ration of the intensity of the waveguide emission to the active region emission fits a model which assumes that the barrier height for minority carriers (holes) is equal to the difference in band gaps between the active region and the waveguide region.