InAlN/InGaN/GaN double heterostructure with improved carrier confinement and high-temperature transport performance grown by metal-organic chemical vapor deposition

摘要

A nearly lattice-matched InAlN/InGaN/GaN double heterostructure (DH) and traditional InAlN/ GaN single heterostructure (SH) were grown by metal-organic chemical vapor deposition. The InN mole fraction of InGaN channel was deduced by XRD and photoluminescence. The electrical properties were characterized by capacitance-voltage and temperature-dependent Hall measurements. Both results revealed that the InAlN/InGaN/GaN DH possessed superior carrier confinement over traditional InAlN/GaN SH owing to the back barrier formed at the InGaN/GaN interface, which prevents the spilling over of carriers and thus remarkably improves the transport performance at high temperature. Furthermore, a thin InGaN layer was preferable for carrier channel applications to a thick one.