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Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition

机译:通过金属有机化学气相沉积法生长的InAlN / InGaN / AlGaN双异质结构中的优异载流子限制

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摘要

InAlN/InGaN/AlGaN double heterostructures were grown and characterized. Temperature-dependent Hall measurements show that the two-dimensional electron gas has a steady density over the entire temperature range tested and a superior transport property compared with the traditional InAlN/GaN single heterostructure at elevated temperatures. The improved performance was attributed to the back barrier, which enhanced the carrier confinement and prevented electrons from spilling into the buffer. In addition, the room-temperature electron mobility of the double heterostructure was 1293 cm/Vs, which is the highest reported for an InGaN-channel heterostructure.
机译:InAlN / InGaN / AlGaN双异质结构得到生长和表征。与温度相关的霍尔测量结果表明,与传统的InAlN / GaN单一异质结构在高温下相比,二维电子气在整个测试温度范围内均具有稳定的密度,并且具有出色的传输性能。性能的提高归因于后壁垒,它增强了载流子的约束并防止了电子溢出到缓冲液中。此外,双异质结构的室温电子迁移率为1293 cm / Vs,这是InGaN沟道异质结构的最高记录。

著录项

  • 来源
    《Applied Physics Letters》 |2014年第22期|1-3|共3页
  • 作者单位

    Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:10:37

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