The stacking faults in GaSb/(001)GaAs heterostructure

摘要

GaSb/(001)GAs is a free stress system owing to the perfect dislocation network obtained through the island growth of the GaSb. The relaxation mechanism of GaSb islands is apparent directly by the creation of 90 deg partial dislocations at the step edge of the GaAs substrate surface. The driving force comes from the local stress variation in the GaSb film caused by the substrate step edge.