A1GaAsSb-InGaAsSb-GaSb Epitaxial Heterostructures for Uncooled Infrared Detectors.

摘要

Lattice matched n-type AlGaAsSb-InGaAsSb-GaSb heterostructures for uncooled infrared detectors including separate absorption and multiplication avalanche photodiodes (SAM-APD) as well as low-voltage InGaAsSb APDs were grown using inexpensive liquid phase epitaxy. Formation of the pn-junction was performed through difflision of Zn from the vapor phase. Responsivity at lamba =2 micronmeter as high as 3.5 A/W was achieved in InGaAsSb APD biased at 8 V with the avalanche multiplication starting at 6 V. Our calculations have shown that the above parameters can result in a NEP value as low as 1x10(sub-12) W or D* value as high as 2x10(sub 10) cm.Hz(sub1/2)/W at room temperature for 400 micronmeter diameter (200 micrometer diameter photoactive area) APD diodes.