首页> 外文会议>Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International >Investigations of hot-carrier-induced breakdown of thin oxides
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Investigations of hot-carrier-induced breakdown of thin oxides

机译:热载流子引起的薄氧化物分解研究

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New oxide breakdown modes induced by hot carrier injection are presented. By using substrate hot electron and hot hole injection techniques, we demonstrate that the oxide damaged by hot carriers shows different breakdown characteristics compared with the case of conventional FN stress experiments. These new experiments reveal that the lifetime of oxide breakdown is not simply determined by the total number of injected holes.
机译:提出了由热载流子注入引起的新的氧化物击穿模式。通过使用衬底热电子和热空穴注入技术,我们证明了与常规FN应力实验相比,热载流子损坏的氧化物表现出不同的击穿特性。这些新的实验表明,氧化物击穿的寿命并不简单地由注入空穴的总数决定。

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