Edge and surface emitting quantum dot lasers

摘要

Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A/cm/sup 2/ for edge emitting and 170 A/cm/sup 2/ for vertical cavity lasers are measured. High internal (<96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices.