Progress in GaN-Based Nanostructures for Blue Light Emitting Quantum Dot Lasers and Vertical Cavity Surface Emitting Lasers

摘要

Our recent progress in GaN-based nanostruc- tures for quantum dot (QD) lasers and vertical microcavity sur- face emitting lasers (VCSELs) is discussed. We have grown InGaN self-assembled QDs on a GaN epitaxial layer, using atmospheric-pressure metalorganic chemical vapor deposition. The average diameter of the QDs was as small as 8.4nm and strong photoluminescence emission from the QDs was observed at room temperature.