Multi-generation device fabrication by ArF lithography

摘要

Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application to 0.13-/spl mu/m devices has not been adequately demonstrated. In next generation sub-0.10 /spl mu/m devices, it is believed that the mix and match process is indispensable with optical lithography and other types of lithography. One reason is the difficulty of fabricating contact holes with a larger process margin. Here, we demonstrate that it is possible to make 0.13-/spl mu/m patterns using a single layer resist in combination with resolution enhancement techniques, and to make sub-0.10 /spl mu/m contact holes using the Top Surface Imaging (TSI) process.