Performance comparison of monolithic W-band singly balanced mixers utilizing GaAs HEMT and InP HBT technologies

摘要

Abstract: We present measured data for three W-band singly-balanced mixers utilizing both GaAs pseudo-morphic HEMT and InP HBT device technologies, and critically compare their LO power requirements, and conversion loss and noise figure performance. Of the three distinct single-balanced mixers which were investigated, i.e. the GaAs HEMT and InP HBT Schottky-diode rat-race mixers and the dual quadrature resistive GaAs HEMT mixer, the InP HBT diode mixer exhibited the best noise figure at low intermediate frequencies and achieved good conversion loss performance with low LO drive requirements. !4