Abstract: In this paper we present a technique utilizing intense UV exposure to alter the chemical properties of an organic antireflective material such that dry etch performance is improved. By monitoring the ARC thickness before and after UV exposure, it can be demonstrated that prolonged UV exposure coupled with a specific range of substrate temperatures can result in a dramatic reduction in ARC thickness. Similar measurements taken before and after ARC etch reveal an improvement in etch rate in ARC samples previously subjected to intense UV exposure. Changes in ARC structure and etch performance are presented as functions of UV wavelengths, substrate temperature, and exposure time. !6
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