A novel InAlAs/InP/InAlAs pnp double heterojunction bipolar transistor grown by MBE

摘要

The authors report the growth and fabrication of a double-heterojunction bipolar transistor (DHBT) using the InP/InAlAs material system. The measured Gummel plot exhibits a collector current ideality factor of 1.25 and a base current ideality factor of 1.5. A collector-emitter breakdown voltage of 6.5 V was measured. From the measured S-parameters, the extrapolated current-gain-cut-off frequency for a 5- mu m*5- mu m size device was 6.5 GHz. The results obtained indicate that the InP/InAlAs heterostructure grown by molecular beam epitaxy is suitable for p-n-p HBTs (heterojunction bipolar transistors).