Photoluminescence lifetime measurements in InP wafers

摘要

An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.