MBE growth of very high electron mobility InAlAs/InGaAs/InP heterostructure

摘要

The growth of a very high electron mobility pseudomorphic In/sub 0.8/Ga/sub 0.2/As heterostructure on InP using an overshoot-free control of flux densities and precise control of the flux ratio through a calibration technique of reflection high energy electron diffraction (RHEED) oscillations in a molecular beam epitaxial (MBE) system is described. The critical layer thickness for the pseudomorphic growth of InGaAs on InP is found to follow the energy balance model, and a very high two-dimensional electron gas mobility of over 1.5 m/sup 2//Vs and over 15 m/sup 2//Vs at 293 K and 10 K, respectively, is obtained.