Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology

机译：基于InP外延剥离技术的GaAs制备长波长QEIC

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The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2*2 buried waveguide optical switch (fully interconnected oil chip), is presented.

机译：讨论了使用外延剥离（ELO）技术将GaAs MESFET电路与InP组件集成在一起。描述了特定的ELO问题（膜-衬底隔离，对准）和解决方案，以及在InP上集成MESFET的各种方法。提出了一种长波长OEIC的制造方法，其中GaAs ELO MESFET与InP 2 * 2掩埋波导光学开关（完全互连的油芯片）集成在一起。

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《Indium Phosphide and Related Materials, 1991., Third International Conference.》|1991年|P.268-271|共4页
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Pollentier; I.; Demeester; P.;
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中图分类无线电电子学、电信技术;
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专利

1. Fabrication of a GaAs-AlGaAs GRIN-SCH SQW laser diode on silicon by epitaxial lift-off [J] . Pollentier I., Buydens L. IEEE Photonics Technology Letters . 1991,第2期

机译：通过外延剥离在硅上制备GaAs-AlGaAs GRIN-SCH SQW激光二极管
2. Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer [J] . Chancerel F., Regreny P., Leclercq J. L., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2019,第期

机译：InGaas太阳能电池的外延升降从INP衬底使用紧张的AlaS / Inalas超晶格作为新的牺牲层
3. High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off [J] . Schumacher H., Gmitter T.J. IEEE Transactions on Electron Devices . 1989,第11期

机译：通过外延剥离在蓝宝石衬底上制备高速InP / InGaAs光电二极管
4. Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology [C] . Pollentier I., Demeester P., Institute of Electric and Electronic Engineer International Conference: Indium Phosphide and Related Materials . 1991

机译：在INP外延剥离技术上使用GaAs制造长波长Qeics
5. Design, fabrication and characterization of high performance InGaAs/InP focal plane arrays in the 1--2.6 micron wavelength region. [D] . Linga, Krishna Rao. 1997

机译：在1--2.6微米波长范围内的高性能InGaAs / InP焦平面阵列的设计，制造和表征。
6. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection [O] . Zhenwu Shi, Lu Wang, Honglou Zhen, 2013

机译：峰值波长控制的InGaAs / AlGaAs量子阱的分子束外延生长用于4.3μm中波长红外检测
7. Fabrication of Thinning Optical Devices by Using Epitaxial Lift-off Technology [O] . Masao KINOSHITA, Kenji HIRUMA, Takashi MIKAWA 2004

机译：通过使用外延剥离技术制造稀薄光学装置

Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology

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